Skip to main content

Featured

CIA tahu serangan balasan Ukraina akan gagal – Seymour Hersh

Optimisme Presiden Zelensky adalah semua bohong, "bulls**t" yang dirancang untuk membodohi Gedung Putih, kata seorang pejabat intelijen kepada Hersh CIA memperingatkan Menteri Luar Negeri AS Antony Blinken bahwa serangan balasan Ukraina yang sedang berlangsung terhadap pasukan Rusia akan gagal, dan bahwa Kiev " tidak akan memenangkan perang ," lapor jurnalis Amerika Seymour Hersh pada hari Kamis. Blinken “ telah mengetahui bahwa Amerika Serikat – yaitu, sekutu kami Ukraina – tidak akan memenangkan perang ” melawan Rusia, tulis Hersh di blog Substack-nya , mengutip seorang pejabat intelijen AS yang tidak disebutkan namanya. “ Kata itu sampai kepadanya melalui Badan (CIA) bahwa pelanggaran Ukraina tidak akan berhasil ,” lanjut sumber Hersh, tanpa menyebutkan kapan peringatan ini mulai muncul. “ Itu adalah pertunjukan oleh (Presiden Ukraina Volodimir) Zelensky dan ada beberapa orang di pemerintahan yang percaya omong kosongnya, bulls**t. ” Serangan balasan Ukraina dimu...
Post a Comment
Read more
Labels

SK Hynix Pamer Chip Memori 321-Layer NAND Pertama di Dunia


SK Hynix baru-baru ini memamerkan keberhasilan mereka membuat chip memori 321-Layer NAND flash di ajang Flash Memory Summit 2023. Manufaktur chip memori asal Korea Selatan itu jadi yang pertama di dunia untuk mencapai lebih dari 300 layer.

SK Hynix mengatakan bahwa chip memori 321-layer memiliki kemampuan penyimpanan 1Tb TLC (1 terabyte Triple-Level Cell). Ini merupakan lompatan besar dari generasi sebelumnya 238-layer 512Gb yang baru memasuki masa produksi masal pada bulan Juli lalu.


Dengan desain die 321-layer, produksi diklaim dapat meningkat hingga 59% sehingga memungkinkan mereka untuk membuat chip memori NAND dengan kapasitas jauh lebih besar dalam satu wafer silikon. Namun, produk jadinya belum akan sampai dalam waktu dekat.

SK Hynix memperkirakan chip memori 321-layer NAND baru akan memasuki produksi masal pada paruh pertama 2025 mendatang. Jadi, masih sekitar dua tahun lagi ya. Dalam kurun waktu tersebut, produk-produk penyimpanan seperti SSD dan juga penyimpanan perangkat mobile termasuk smartphone mungkin baru mulai menggunakan chip memori 238-layer NAND.

Dalam kesempatan yang sama, SK Hynix juga mengumumkan bahwa mereka sudah mulai mengembangkan PCIe Gen6 dan UFS 5.0. Kendati demikian, mereka tak memberikan detail lebih lanjut soal jenis interface generasi terbaru untuk perangkat komputer dan mobile tersebut.

============================================================

SK hynix Showcases Samples of World’s First 321-Layer NAND


News Highlights

  • SK hynix unveils development progress of world’s first NAND with more than 300 layers at FMS 2023
  • Next-generation NAND solutions such as PCIe 5th Gen, UFS 4.0 also unveiled
  • “Innovation to continue for development of high-performance NAND for AI era”

Seoul, August 9, 2023

SK hynix Inc. (or “the company”, www.skhynix.com) showcased today the sample of the 321-layer 4D NAND, making public the progress on its development of the industry’s first NAND with more than 300 layers.

The company gave a presentation on the progress on the development of its 321-layer 1Tb TLC1¹ 4D NAND Flash and displayed the samples at the Flash Memory Summit (FMS) 2023² taking place Aug. 8-10 in Santa Clara.

¹Triple Level Cell (TLC): NAND Flash products are categorized into single, multi, triple, quadruple and penta level cells depending on the number of information (in bit unit) contained in a single cell. That a cell contains more information means more data can be stored within the same extent of area.

²Flash Memory Summit (FMS): the biggest annual conference for NAND Flash industry.

SK hynix is the first in the industry to unveil the progress on the development of a NAND with more than 300 layers in detail. The company plans to raise the level of completion of the 321-layer product and start mass production from the first half of 2025.

The company said its technological competitiveness accumulated from the success of the world’s highest 238-layer NAND, already in mass production, paved the way for a smooth progress for the development of the 321-layer product. “With another breakthrough to address stacking limitations, SK hynix will open the era of NAND with more than 300 layers and lead the market.”

The 321-layer 1Tb TLC NAND comes with a 59% improvement in productivity, compared with the earlier generation of 238-layer 512Gb, thanks to the technology development that enabled stacking of more cells and larger storage capacity on a single chip, meaning the total capacity that can be produced on a single wafer increased.

Since the introduction of ChatGPT that accelerated the growth of the generative AI market, demand for high-performance and high-capacity memory products that can process more data at a faster pace is growing rapidly.

Accordingly, at the FMS, SK hynix also introduced next-generation NAND solutions optimized for such AI demand, including the enterprise SSD adopting the PCIe Gen5 interface and UFS 4.0.

The company expects these products to achieve industry-leading performance to fully meet the needs of the customers with a focus on high performance.

SK hynix also announced that it has started development of the next-generation PCIe Gen6 and UFS 5.0 with the improved technology for solution development that it acquired through these products and expressed its commitment to leading the industry trend.

Jungdal Choi, Head of NAND Development, said during a keynote speech that the company expects the ongoing development of the 321-layer product, the fifth generation of the 4D NAND, to help the company solidify its technological leadership in the NAND space. “With timely introduction of the high-performance and high-capacity NAND, we will strive to meet the requirements of the AI era and continue to lead innovation.”


Sumber:

SK Hynix Newsroom

Jagat Review

Labels:

Comments

Post a Comment